Ce掺杂0.85Bi_4Ti_3O_(12)-0.15LiNbO_3铋层状铁电陶瓷的显微结构与性能(英文)

Microstructure and Electrical Properties of Cerium-modified Bismuth-Layer 0.85Bi_4Ti_3O_(12)-0.15LiNbO_3 Piezoelectric Ceramics

采用固相法制备CeO2掺杂改性0.85Bi4Ti3O12-0.15LiNbO3(BTO-LN)铋层状压电陶瓷。借助于X射线衍射和扫描电子显微镜研究了CeO2掺量与BTO-LN陶瓷晶体结构和电性能的关系。结果表明:所有陶瓷样品均为单一的正交相结构;随CeO2掺量的增加,陶瓷的晶粒尺寸变大,Curie温度TC由653℃下降到617℃;CeO2掺杂提高了样品的压电性能,压电常数d33随CeO2掺量的增加先增大后减小,相对介电常数εr表现出相反的变化趋势;当CeO2的掺入量为0.75%时,样品的电性能最佳,即d33=25pC/N,机械品质因数Qm=2 895,介电损耗tanδ=0.10%,TC=617℃。

The cerium modified 0.85Bi4Ti3O12-0.15LiNbO3(BTO-LN)piezoelectric ceramics were synthesized by a conventional solid state process.The effect of cerium addition on the microstructure and electrical properties of the ceramics was investigated.The 0.85Bi4Ti3O12-0.15LiNbO3 based ceramics possess a pure three-layer Aurivillius-type structure.The piezoelectric properties of the ceramics are enhanced and the dielectric loss is decreased after cerium doping.The Curie temperature,TC,decreases from 653 to 617℃ with increasing the cerium content.The piezoelectric constant,d33,dielectric loss,tanδ,and mechanical quality factor,Qm,for the BTO-LN ceramics with CeO2 addition of 0.75% are 25pC/N,0.10% and 2 895,respectively.The higher TC(i.e.,617℃)and the stable piezoelectric properties are obtained.It is indicated that the cerium modified BTO-LN piezoelectric ceramics are a promising candidate for high-temperature applications.