退火温度对溅射法沉积Cu-Cr-O薄膜性能的影响

Effect of Annealing Temperature on Properties of Cu–Cr–O Thin Films Deposited by Sputtering Technology

使用Cu Cr O2陶瓷靶材,利用射频磁控溅射方法在石英衬底上沉积了Cu-Cr-O薄膜,研究了退火温度对Cu-Cr-O薄膜结构及光电性能的影响。X射线衍射分析显示,退火温度为973 K时薄膜即已晶化并形成单相铜铁矿结构CuCrO2,随着退火温度的升高,薄膜结晶性逐渐提高。紫外-可见光谱与电学性能测量结果表明:薄膜可见光透过率随退火温度升高呈上升趋势,电导率则呈下降趋势,在973～1273K退火薄膜的可见光透过率最高为50%,电导率最高为0.12 S/cm。扫描电子显微镜照片显示,Cu-Cr-O薄膜电导率的下降主要与退火产生的微裂纹有关。

Cu-Cr-O thin films were prepared by the RF magnetron sputtering technology on quartz substrates with a sintered Cu Cr O2 ceramic as a target. The influence of annealing temperature on the structural and optoelectronic properties of the Cu-Cr-O thin films was investigated. The X-ray diffraction analysis reveals that the Cu-Cr-O film annealed at 973 K has a delafossite structure without other phases, and the crystallinity of the film increases with the increase of the annealing temperature. Based on the measurements by ultraviolet–visible spectroscopy and the electrical property, the optical transmittance increases and the conductivity decreases as the annealing temperature increases. The maximum optical transmittance and conductivity of the film annealed at 973-1 273 K are 50% and 0.12 S/cm, respectively. The results by scanning electron microscopy indicate that presence of micro-cracks in the film could be the main reason for the decreased electrical conductivity.