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强力去污膏配方试验与设计

Formula Design of Strong Decontamination Cream
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摘要 本文通过筛选不同目数和类型的无机摩擦剂,设计了一款强力去污膏配方,能够除去一些平常去污膏所去除不掉的顽固污渍,并且对该产品配方设计时以水代替有机溶剂。产品具有环境友好,去污、增亮效果较好等特点。 In this paper, we choose different amount and types of inorganic friction agent to design an effective cleansing cream, which can be used to remove some stubborn stains while others cannot. We replace the organic solvent by water for eco-friendly, and the product has better effect in cleaning and brightening.
出处 《工业技术创新》 2016年第4期725-727,共3页 Industrial Technology Innovation
关键词 强力去污膏 无机摩擦剂 环境友好 Effective Cleansing Cream Inorganic Friction Agent Eco-friendly
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  • 1高宏刚,曹健林,陈斌.浮法抛光超光滑表面加工技术[J].光学技术,1995,21(3):40-43. 被引量:18
  • 2Hanazono M, Amanokura J, Kamigata Y. Development and application of an abrasive-free polishing solution for copper [ J ]. Mrs Bulletin, 2002 , 27(10) : 772-775.
  • 3Kondo S, Sakuma N, Homma Y, et al. Abrasive-free polishing for copper damascene interconnection [ J ]. J Electrochem Soc, 2000, 147(10) : 3907-3913.
  • 4Yamaguchi H, Ohashi N, Imai T, et al. A 7 level metallization with Cu Damascene process using newly developed abrasive free polishing[ C ]. IEEE International Interconnect Technology Conference, 2000: 264-266.
  • 5Li S J, Sun L Z, Tsai S, et al. A low cost and residue-free abrasive-free copper CMP process with low dishing, erosion and oxide loss [ C ]. IEEE International Interconnect Technology Conference, 2001 : 137-139.
  • 6Zhang L, Subramanian R S. A model of abrasive-free removal of copper films using an aqueous hydrogen peroxide-glycine solution [J]. Thin Solid Films, 2001,397(1-2) : 143-151.
  • 7DeNardis D, Sorooshian J, Habiro M, et al. Tfibology and removal rate characteristics of abrasive-free slurries for copper CMP applications[ J]. Jpn J Appl Phys, 2003, 42(11 ): 6809-6814.
  • 8Haque T, Balakumar S, Kumar A S, et al. A material removal rate model for copper abrasive-free CMP [ J ]. J Electrochem Soc, 2005, 152(6): G417-G422.
  • 9Balakumar S, Haque T, Kumar A S. Wear phenomena in abrasive-free copper CMP process [ J ]. J Electrochem Soc, 2005, 152(11) : G867-G874.
  • 10Balakumar S, Haque T, Kumar R, et al. Investigation on abrasive free copper chemical mechanical planarization for Cu/low k and Cu/ultra low k interconnects [ C ]. Mater Res Soc Symp Proc, 2005, 867: 21-33.

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