摘要
The finite-difference time-domain method was employed to calculate light extraction efficiency of thin-film flip-chip In Ga N/Ga N quantum well light-emitting diodes（LEDs） with TiO2 microsphere arrays. The extraction efficiency for LEDs with microsphere arrays was investigated by focusing on the effect of the packing density,packing configuration, and diameter-to-period ratio. The comparison studies revealed the importance of having a hexagonal and close-packed monolayer microsphere array configuration for achieving optimum extraction efficiency, which translated into a 3.6-fold enhancement in light extraction compared to that for a planar LED. This improvement is attributed to the reduced Fresnel reflection and enlarged light escape cone. The engineering of the far-field radiation patterns was also demonstrated by tuning the packing density and packing configuration of the microsphere arrays.
The finite-difference time-domain method was employed to calculate light extraction efficiency of thin-film flip-chip In Ga N/Ga N quantum well light-emitting diodes（LEDs） with TiO2 microsphere arrays. The extraction efficiency for LEDs with microsphere arrays was investigated by focusing on the effect of the packing density,packing configuration, and diameter-to-period ratio. The comparison studies revealed the importance of having a hexagonal and close-packed monolayer microsphere array configuration for achieving optimum extraction efficiency, which translated into a 3.6-fold enhancement in light extraction compared to that for a planar LED. This improvement is attributed to the reduced Fresnel reflection and enlarged light escape cone. The engineering of the far-field radiation patterns was also demonstrated by tuning the packing density and packing configuration of the microsphere arrays.
基金
the U.S. Department of Energy (Grant No. NE TL, DE-PS26-08NT00290)
in part by the National Science Foundation (ECCS-1408051, CBET1120399)
