摘要
Optical simulations of GaAs/AlGaAs thin-film waveguides were performed for investigating the dependence of the modal behavior on waveguide geometry and the resulting analytical sensitivity. Simulations were performed for two distinct mid-infrared wavelengths, thereby demonstrating the necessity of individually designed waveguide structures for each spectral regime of interest. Hence, the modal behavior, sensitivity, and intensity of the evanescent field were investigated via modeling studies at 1600 and 1000 cm^(-1), thereby confirming the utility of such simulations for designing mid-infrared sensors based on thin-film waveguide technology.
Optical simulations of GaAs/AlGaAs thin-film waveguides were performed for investigating the dependence of the modal behavior on waveguide geometry and the resulting analytical sensitivity. Simulations were performed for two distinct mid-infrared wavelengths, thereby demonstrating the necessity of individually designed waveguide structures for each spectral regime of interest. Hence, the modal behavior, sensitivity, and intensity of the evanescent field were investigated via modeling studies at 1600 and 1000 cm^(-1), thereby confirming the utility of such simulations for designing mid-infrared sensors based on thin-film waveguide technology.
基金
funding from the European Union’s Seventh Framework Programme managed by REA Research Executive Agency http://ec.europa.eu/rea (FP7/2007-2013) under grant agreement no.314018 FP7-SME-2012-SME
support of this study by the Kompetenznetz Funktionelle Nanostrukturen Baden Wuerttemberg,Germany
