期刊文献+

Unidirectional lasing in semiconductor microring lasers at an exceptional point [Invited] 被引量:12

Unidirectional lasing in semiconductor microring lasers at an exceptional point [Invited]
原文传递
导出
摘要 Recent experiments demonstrated that chiral symmetry breaking at an exceptional point(EP) is a viable route to achieve unidirectional laser emission in microring lasers. By a detailed semiconductor laser rate equation model,we show here that unidirectional laser emission at an EP is a robust regime. Slight deviations from the EP condition can break preferential unidirectional lasing near threshold via a Hopf instability. However, abovea "second" laser threshold, unidirectional emission is restored. Recent experiments demonstrated that chiral symmetry breaking at an exceptional point(EP) is a viable route to achieve unidirectional laser emission in microring lasers. By a detailed semiconductor laser rate equation model,we show here that unidirectional laser emission at an EP is a robust regime. Slight deviations from the EP condition can break preferential unidirectional lasing near threshold via a Hopf instability. However, abovea "second" laser threshold, unidirectional emission is restored.
出处 《Photonics Research》 SCIE EI 2017年第6期11-16,共6页 光子学研究(英文版)
基金 National Science Foundation(NSF)(DMR-1506884) Army Research Office(ARO)(W911NF-15-1-0152)
  • 相关文献

同被引文献46

引证文献12

二级引证文献25

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部