摘要
Efficient, scalable, bufferless, and compact Ⅲ–V lasers directly grown on(001)-oriented silicon-on-insulators(SOIs) are preferred light sources in Si-photonics. In this article, we present the design and operation of Ⅲ–V telecom nanolaser arrays with integrated distributed Bragg reflectors(DBRs) epitaxially grown on industry-standard(001) SOI wafers. We simulated the mirror reflectance of different guided modes under various mirror architectures, and accordingly devised nanoscale DBR gratings to support high reflectivity around1500 nm for the doughnut-shaped TE01 mode. Building from InP/InGaAs nanoridges grown on SOI, we fabricated subwavelength DBR mirrors at both ends of the nanoridge laser cavities and thus demonstrated room-temperature low-threshold InP/InGaAs nanolasers with a 0.28 μm^2 cross-section and a 20 μm effective cavity length. The direct growth of these bufferless nanoscale Ⅲ–V light emitters on Si-photonics standard(001) SOI wafers opens future options of fully integrated Si-based nanophotonic integrated circuits in the telecom wavelength regime.
Efficient, scalable, bufferless, and compact Ⅲ–V lasers directly grown on(001)-oriented silicon-on-insulators(SOIs) are preferred light sources in Si-photonics. In this article, we present the design and operation of Ⅲ–V telecom nanolaser arrays with integrated distributed Bragg reflectors(DBRs) epitaxially grown on industry-standard(001) SOI wafers. We simulated the mirror reflectance of different guided modes under various mirror architectures, and accordingly devised nanoscale DBR gratings to support high reflectivity around1500 nm for the doughnut-shaped TE01 mode. Building from InP/InGaAs nanoridges grown on SOI, we fabricated subwavelength DBR mirrors at both ends of the nanoridge laser cavities and thus demonstrated room-temperature low-threshold InP/InGaAs nanolasers with a 0.28 μm^2 cross-section and a 20 μm effective cavity length. The direct growth of these bufferless nanoscale Ⅲ–V light emitters on Si-photonics standard(001) SOI wafers opens future options of fully integrated Si-based nanophotonic integrated circuits in the telecom wavelength regime.
基金
Research Grants Council,University Grants Committee(16212115,16245216,AoE/P02/12)
Innovation and Technology Fund(ITS/273/16FP)
William Mong Institute of Nano Science and Technology(WMINST19/SC04)
