摘要
介绍了DRAM 0.1mm特征尺寸理论极限的突破及相关技术进展,以及各种非易失性随机存储器(NVRAM)如FeRAM,相变RAM,MRAM。现今PC中的RAM很快将被NVRAM所取代,从而可缩短PC的启动时间。
This article introduces the theoretical limit 0.1mm of the critical dimension of DRAM andits breaking through,the related technologies, and the development of the varies NVRAM, such asFeRAM, phase transformation RAM and MRAM. RAM in present PC will be immediately substi-tuted by NVRAM to minimize the starting time for PC.
出处
《半导体技术》
CAS
CSCD
北大核心
2002年第12期10-13,共4页
Semiconductor Technology
