CdS薄膜的电输运和光学性质

Electrical Transport and Optical Properties of CdS Thin Films

通过喷雾热解获得CdS薄膜,在氮气中做了退火处理,观测到吸收边随退火温度升高而移动;在室温下的拉曼谱中观察到CdS的2个特征峰;经暗电阻与温度的变化关系的测试,发现激活能存在着极小值,用载流子衰减时间的变化能较好地解释其缘由;探讨了光电导与入射光强以及退火温度的关系.

CdS thin films were synthesized by a spray pyrolysis technique. The asprepared samples were annealed under nitrogen ambient. The absorption edge of the CdS thin film had a shift in comparison with that of the bulk CdS as the annealing temperature changed. The two characteristic peaks were observed in the Raman spectrum of CdS thin films at room temperature. The variation of dark resistance as a function of temperature was investigated and a minimum of the activation energy was observed. It can be explained reasonably in terms of the change in carries decay time. The variation of light electrical conductivity of CdS thin films as function of incident optical intensity was discussed and the relation between the light electrical conductivity and the activation energy was clarified.