摘要
介绍了微电子行业的清洗现状以及其工艺的清洗原理(包括颗粒、金属离子等),分析了存在的问题,阐述了硅片清洗的急待解决的难题和ODS(破坏臭氧层物质)清洗液的替代问题.说明了润湿剂、渗透剂和螯合剂的作用,并对今后的微电子清洗发展方向进行了展望.
The basic principle of cleaning (such as particles and metallic ions etc.) and the current situation of cleaning in microelectronics are introduced. The question is analyzed. The urgent problem of silicon wafer cleaning and substitution of ozonosphere destroying substrate are elaborated emphatically. The functions of wetting agent, infiltration and chelation is explained. The developing orientations of microelectronic cleaning are also presented.
出处
《河北工业大学学报》
CAS
2002年第6期11-17,共7页
Journal of Hebei University of Technology