摘要
分析了n型半导化TiO_2压敏陶瓷中晶粒间界处的受主态性质,得出为晶界受主态的能级是多级化的;利用晶界平衡热电子发射势垒模型,合理地解释了该材料的I-V非线性特征;从理论上推导出了非线性系数α正比于晶界电压,且与晶界受主态的分布函数有密切关系.
An analysis based on property of the acceptors at grain boundaries of semiconducting n- TiO2 varistor ceramic and the distribution with multi energy levels were considered in this paper. The I-V nonlinear characteristic of the ceramics was explained reasonably by thermo - electron emission model of grain boundary barrier. The relation of nonlinear coefficient a in proportion to the voltage at grain boundary was induced theoretically, and related to distributing function of acceptor state density in the grain boundary.
出处
《哈尔滨理工大学学报》
CAS
2002年第6期29-31,共3页
Journal of Harbin University of Science and Technology
基金
广州市教育局资助项目(01-2)
