摘要
在Pt/TiO_2/SiO_2/Si衬底上,用金属有机物分解法(MOD)制备了SrBi_2Ta_2O_9(SBT)铁电薄膜.研究了SBT薄膜的晶体结构,表面形貌以及它的电学性能,结果表明SrBi_2Ta_2O_9铁电薄膜具有良好的抗疲劳特性,在经过10~9次极化反转后其剩余极化强度P_r变化不大,约为3％,并且漏电流较低,在测量电压为1V时,漏电流密度为5.73×10^-8A/cm^2.
SrBi2Ta2O9(SBT) ferroelectric thin films were prepared on Pt/TiO2/SiO2/Si substrates by using a metalorganic decomposition(MOD) method. The structure, surface morphology and electrical properties of SBT thin films were studied. SBT thin films showed excellent free-fatigue properties affter 109 switching cycles. The laskage current density was 5.73 × 10~8A/cm2 at 1V.
出处
《哈尔滨理工大学学报》
CAS
2002年第6期34-36,共3页
Journal of Harbin University of Science and Technology
基金
国家自然科学基金资助(19890310)
