硅元素对钽丝再结晶行为的影响

Effect of silicon on recrystallization behavior of tantalum wires during annealing

采用显微硬度测量、取向分布函数 (ODF)分析及显微组织观察 ,研究了在不同退火温度以及掺硅与未掺硅条件下钽丝的再结晶行为。研究发现 :在 136 0℃退火时掺硅对钽丝的再结晶有阻碍作用 ,晶粒变细 ,丝织构主要由 { 110 }〈0 0 1〉组成 ;当退火温度升高至 15 0 0℃时 ,{ 12 0 }〈0 0 1〉再结晶织构消失 ,在未掺硅钽丝中发现了新的 { 4 41}〈110〉织构组分 ,与初次再结晶织构组分 { 12 0 }〈0 0 1〉之间存在一个近似于 84°〈110〉的转动关系 ,此时 ,掺入硅元素反而促进了再结晶的发展 ,晶粒变得粗大且不均匀。这种现象可以用硅化物的形成与溶解来解释。

The recrystallization textures of the tantalum wires with silicon additives(0.01%) after annealed at different temperatures were investigated by ODF, and the recrystallization mechanism was studied by microstructures and hardness measurement. It is found that the recrystallization temperature increases with silicon additives after annealed below 1 360 ℃ and the main texture component consists of {110}<001>, but at 1 500 ℃, the exaggerated growth occurs. The size of recrystallized grains grows larger and a new component {441}<110> having an 84°<110> orientation relationship to the primary texture {120}<001> is found. The reason for the exaggeration may be the dissolution of dislocation-silicon atom pairs