多孔硅光电导特性研究

Investigation on the Characteristics of Porous Silicon

多孔硅材料具有较强的可见光光电导效应 ,本文采用阳极氧化工艺制作了 Al/PS/Si/Al的结构样品 ,给出了由不同工艺制备的样品的光电导响应曲线及其峰值。结果表明 :多孔硅禁带宽度在 1 .9e V左右 ,大于 Si的禁带宽度 1 .1 2 e V,这与多孔硅的发光现象和能带展宽理论相一致。

Porous silicon possess large photoconductivity effects in the visible range. The samples with the structure of Al/PS/Si/Al were prepared by anode oxidation. The photoconductivity responses and values of samples made with different preparing conditions were given. The results indicated that the band gap of porous silicon is about 1.9 eV, which is great than that of silicon (1.2 eV).