高温SOICMOS倒相器瞬态特性的研究

Study on Transisent Characteristics of High Temperature SOI CMOS Inverter

本文主要研究高温 SOI CMOS倒相器在 (2 7～ 30 0℃ )宽温区的瞬态特性。研究结果表明 :当采用 N+ PN+和P+ PP+ 结构薄膜 SOI MOSFET组合 ,并且其结构参数满足高温应用的要求 ,则 SOI CMOS倒相器实验样品在 (2 7～ 30 0℃ )

WT10.5,10.BZ]In this paper, the transient characteristics of high temperature SOI CMOS inverter in (27～300℃) are studied.Research results show that when combination structure of N\++PN\++ and P\++PP\++ thin film SOI MOSFET is employ and structure parameters meet the demands of high temperature property the SOI CMOS inverter experimental sample have excellent high temperature transient characteristics in (27～300℃).