摘要
光刻过程中 ,抗蚀剂内部光敏混合物 (PAC)浓度受光场的影响呈驻波分布 ,导致抗蚀剂显影后的侧壁轮廓成锯齿状。分析了后烘 (PEB)对PAC浓度分布的影响 ,模拟了不同后烘扩散长度下的抗蚀剂显影轮廓 ,从模拟结果可知利用后烘可明显减小驻波效应 ,得到平滑的抗蚀剂显影轮廓 ,提高光刻质量。
During lithography process PAC concentration in the resist would be influenced by the intensity of light and its typical distribution alone the resist depth is characterized by standing wave. So the sidewall of resist would be rough after development. We analyzed the influence of PEB on PAC concentration distribution and simulated the resist profiles under various PEB diffusion lengths. From the simulation results we found that PEB could reduce the standing wave effects and improve the resist development profile.
出处
《微细加工技术》
2002年第4期36-39,44,共5页
Microfabrication Technology
关键词
光刻
驻波效应
后烘
光敏混合物
模拟
post-exposure bake(PEB)
photoactive compound(PAC)
standing wave effect
simulation
