摘要
介绍了一种具有高附着力和优良绝缘性能的Ta2 O5 介质膜 ,它由离子束溅射镀膜工艺制备而成。检测了在不同氧气流量下制备的氧化钽薄膜的绝缘性。结果表明 :在其余条件相同的情况下 ,氧气流量越大所制备的薄膜绝缘程度越高。但当氧气流量达到一定的程度时 ,其绝缘程度不再有所变化。
The Ta 2O 5 dielectric films with high adhesion and excellent insulating properties are introduced. The films are formed by IBS. The insulating properties of Ta 2O 5 films fabricated in different flows of O 2 are measured. The results show that if other conditions were same, the larger flow of oxygen, the higher insulating properties of Ta 2O 5 films. But the insulating properties of Ta 2O 2 film will not vary when the flow of oxyen reach a certain quantity.
出处
《微细加工技术》
2002年第4期58-60,共3页
Microfabrication Technology
