纳米技术与能带工程对Si基高效发光的促进

NANO-TECHNOLOGY AND ENERGY BAND ENGINEERING TO PROMOTE THE HIGH EFFICIENT LUMINESCENCE OF SILICON

自 1 991年CanhamL .T发现多孔Si的强发光特性之后 ,Si基发光的系列性探索已走过了 1 0年的路程。人们从中认清了一些重要的科学问题 ,发展和掌握了许多新的技术 ,也取得了许多有价值的重要进展。可以说过去的 1 0年是处於四方探索的百花齐放阶段。现在无论从应用目标的需求和开拓研究的思路与途径 ,都更加明确、集中 ,一个有实用价值的Si基发光器件的研究高潮即将来临。本文着重评述介绍了四个方面的研究进展 ,即局域态nc_Si的发光 ,基於能带工程的Si基发光 ,纳米结构Si化物的发光和Ge/Si量子点的发光研究 ,指出了各自存在的问题 ,提出了若干新的研究思路。本文还把Si基发光的研究与微电子发展需求紧密结合 ,由此提出了下一阶段开展Si基发光研究应予遵循的几项原则。

Since the high efficient luminescence from porous Si was discovered by Canham L. T. in 1991, the systematic investigation on luminescence from Si_based materials has been already carried on during last decade. Some recognition of scientific problems and a lot of new technologies to be developed and mastered have achieved complete success. At present, either the application goal or the research concepts and ways are more explicit and concentrated. A high tide of investigation, which is more practical and valuable, will come on soon. Four areas of research progress: luminescence from localized nano_Si, luminescence based on energy band engineering of Si, luminescence from silicide with direct energy band structure and the Ge/Si quantum dots, will be introduced and discussed here. Some novel investigated ideas will be presented. According to the requirement of development of Si_based microelectronics, some rules which must be concerned are also presented in this paper.