摘要
文章以正方形单胞为例,较系统地分析了VDMOSFET的特征导通电阻与结构参数之间的关系。重点讨论了N沟道VDMOSFET的P?体扩散区结深Xjp?和栅氧化物厚度Tox对器件特征导通电阻RonA的影响。首次给出了多晶硅窗口区尺寸PW和多晶区尺寸PT的最佳化设计比例PW/PT与Xjp?和Tox的关系。最后阐述了器件的最佳化设计思想。
Th e relation between specific on-resistance andstructure parameters of VDMOSFET is analyzed systematically on the basis of a square cell.And the influence of j unction depth p-diffusion area Xjp-and thickness of gate SiO 2 Tox on specific on-resistance of N-channel VDMOSFET is centered on. The relation between the optimally scaled design(PW/PT)of the size of poly-w indow PW,the size of poly-length PT and Xjp-,Tox is presented for the first time.At last the best design idea of the d evice is stated.
出处
《微电子学与计算机》
CSCD
北大核心
2002年第12期56-58,36,共4页
Microelectronics & Computer
