摘要
采用有耗片内螺旋电感和 0 .1 8μm CMOS工艺对集成行波放大器进行了设计 ,其仿真增益在 1 4GHz的频带内大于 1 5 d B.仿真了有耗片内螺旋电感的分布参数对放大器增益的影响 ,该仿真结果对放大器的设计和优化具有很好的指导作用 .
A traveling-wave amplifier (TWA) with lossy transmission line was discussed. An integrated CMOS TWA with lossy on-chip spiral inductor was designed with 0.18 μm CMOS process, the simulated gain is over 15 dB on 14 GHz bandwidth. Besides, the gain of TWA versus the distributed parameters of lossy on-chip spiral inductor was simulated, and the simulated results have some guideline to the optimizing design of TWA.
出处
《上海交通大学学报》
EI
CAS
CSCD
北大核心
2002年第12期1781-1784,共4页
Journal of Shanghai Jiaotong University
基金
国家"九五"重点科技攻关项目 (97-773 -0 4-0 1(5 ) )
