多晶硅太阳电池表面化学织构工艺

INVESTIGATION OF SURFACE TEXTURE BY CHEMICAL METHOD ON POLYSILICON SOLAR CELLS

用化学腐蚀方法织构多晶硅片的表面 ,利用SEM分析了化学腐蚀后多晶硅片表面状态 ,通过反射谱的测试 ,分析了多晶硅片表面陷光效果。结果表明酸溶液腐蚀的硅片表面相对平整 ,有均匀的腐蚀坑 ,反射率很小。在没有任何减反射膜的情况下 ,在 5 0 0～ 10 0 0nm波长范围内 ,反射率在 16%以下 ,有较好的表面陷光效果。而用碱溶液和双织构腐蚀方法得到的多晶硅表面陷光作用都不很理想 ,反射率高于酸溶液腐蚀硅片 。

The polycrystalline silicon wafer is etched by chemical method. The polycrystalline silicon surface is analyzed by SEM and the light trapping of the wafer surface by reflection spectrum. The results indicate that the surface etched by acid solution is comparative smooth, the surface filled with the uniform etched pits, and very low reflectance. Without any anti reflection coating, the wafer reflectivity is about 16% at the wavelength range of 500～1000nm. The reflectances of the surfaces by alkali solution or by alkali solution after acid are higher than that one by acid solution.