摘要
针对光电探测、MEMS传感器微弱电流检测,设计了一种高阻型I-V转化皮安级电流检测电路.通过分析电路环路稳定性,指出了电路稳定的条件以及环路补偿措施.分析了电路带宽的影响因素,给出了电路带宽计算方法.介绍了微弱电流检测电路的相关屏蔽措施.通过试验,对电路的性能进行了测试,实验测试表明:当输入微弱电流值大于10pA的时候,该电路最大误差为1.5%.电路的灵敏度为10.052 8mV/pA.该电路可满足光电探测与MEMS传感器微弱电流检测的需求.
In view of photoelectric detection and weak current detection of MEMS sensor,a high resistance I-V conversion pA level current detection circuit was designed.By analyzing the stability of the circuit loop,the conditions for circuit stability and the loop compensation measures were pointed out.The influence factors of circuit bandwidth were analyzed,and the circuit bandwidth calculation formula was given.The relevant shielding measures of weak current detection circuit were introduced.The performance of the circuit was tested through experiments.The experimental results show that the maximum error of the circuit is 1.5%when the input weak current is greater than 10 pA.The sensitivity of the circuit is 10.052 8 mV/pA.The circuit can meet the demands of weak current detection for photoelectric detection and MEMS sensors.
作者
王威
崔敏
李孟委
张鹏
吴倩楠
张胜男
WANG Wei;CUI Min;LI Meng-wei;ZHANG Peng;WU Qian-nan;ZHANG Sheng-nan(Science and Technology on Electronic Test&Measurement Laboratory,North University of China,Taiyuan030051,China;School of Instrument and Electronics,North University of China,Taiyuan030051,China;School of Electrical and Control Engineering,North University of China,Taiyuan030051,China)
出处
《中北大学学报（自然科学版）》
CAS
2019年第2期173-179,共7页
Journal of North University of China(Natural Science Edition)
基金
中北大学自然科学基金资助项目(2017024)
