一种高质量石墨烯/氮化硼异质结制备工艺研究

Research on Preparation Process of High Quality Graphene/Boron Nitride Heterojunction

针对目前石墨烯器件的纳米薄膜由于转移工艺导致质量及一致性差的现状,本文基于常规的RCA清洗工艺对纳米薄膜湿法转移工艺进行了改进,完成了高质量石墨烯/氮化硼(BN)异质结的制备.本工艺在原有转移工艺中加入了清洗工艺,利用稀盐酸溶液和稀氨水分别去除薄膜转移过程中产生的重金属污染物和有机污染物,并通过稀HF溶液对衬底表面进行了预处理,提高纳米薄膜的平整度、减少褶皱,进一步提高石墨烯/BN异质结的质量.通过对常规工艺及改进转移工艺制备的异质结SEM扫描结果、电学性能及拉曼光谱的对比,改进后的转移工艺制备完成的异质结褶皱与污染物明显减少,电阻增大,2D/G峰强度比提升至3.23,异质结的质量有明显提高.

In view of the fact that the quality of nanocrystalline films of graphene devices is poor due to the transfer process,the wet transfer process of nanocrystalline films is improved based on the traditional RCA cleaning process.High quality graphene/boron nitride(BN)heterojunction was prepared.The cleaning process was added to the original transfer process,heavy metal pollutants and organic pollutants were removed by dilute hydrochloric acid solution and dilute ammonia solution respectively,the substrate surface was pretreated by dilute HF solution,the preparation of high quality graphene/boron nitride heterojunction can be realized by improving the smoothness of nanometer film.By comparing the results of SEM scanning,electrical properties and Raman spectra of the heterojunction prepared by conventional and modified transfer process,the improved transfer process can obviously reduce the heterojunction folds and contaminants,and increase the resistance,when the 2 D/G peak intensity ratio is increased to 3.23,the quality of the heterojunction is improved obviously.