摘要
采用激光椭圆偏振仪、俄歇电子能谱仪和电学方法等手段对面垒探测器中的Au-Si界面进行了研究。实验结果表明,在Au-Si之间存在一层数纳米厚的薄氧化层,它的成分和结构与制作工艺有关,通常是不完全氧化膜,它的存在对探测器性能有重大作用。
The interface between Au and Si in SSB detector was studied with cllipmetry, AES andelectrical method. The results have shown, that an extremely thin oxidized layer (25 - 100A) exists between Au and Si. Its composition and structure relate to the detector preparing technology, usually is an incomplete oxidized layer.Its present has an important effect on the properties of the detectors.
出处
《核电子学与探测技术》
CAS
1987年第2期65-68,共4页
Nuclear Electronics & Detection Technology
