GIS中快速暂态过程的计算机研究——残留电荷和上升时间对过电压幅值的影响

A Computational Study of Very Fast Transisents in GIS with Special Reference to the Effects of Trapped Charge and Risetime on Overvoltage Amplitude

本文利用计算机模拟对气体绝缘电器(GIS)中的快速暂态现象进行了研究。当其他条件不变时,不同的残留电荷下快速暂态过程产生的过电压幅值间存在简单的代数关系。当预期过电压较高时,采用残留电荷为1p.u.的假定与实际上极少超过的0.4p.u.的情况相比,超估可达20％以上。对于末端开路的接线,采用上升时间为0的假定与上升时间为5ns或更长的情况相比,估算出的过电压值可高30％以上。GIS接线中主干支路长度变化时,开路端过电压的变化可达50％以上。

In this paper the very fast transient phenomena inGIS have been studied by computer simulation. Special reference to effects of two main parameters, the trapped charge and the risetime, on the overvoltage amplitude is described. The influence of section length of GIS configuration on the overvoltage amplitude has also been investigated.