摘要
采用磁控溅射法在玻璃衬底上制备了FTO/NTO复合薄膜.通过紫外可见光谱(UV-vis)、双电测四探针仪和电化学工作站对薄膜的光电性能进行表征,测量并分析了NTO阻挡层(兼作传输层)厚度改变对FTO/NTO复合薄膜组装器件光电性能的影响.实验结果表明:阻挡层厚度的变化能改变光生载流子的寿命,当NTO薄膜厚度为90 nm时,光生载流子寿命最高,阻挡层抑制光生载流子复合的效果最好; FTO/NTO复合薄膜的可见光透过率可达84%以上,同时能满足正向电子传输的导电要求.
The FTO/NTO composite films were prepared on glass substrates by magnetron sputtering. The photoelectric properties of the films were characterized by ultraviolet-visible spectroscopy( UV-vis),four-probe instrument and electrochemical workstation. The NTO films barrier layer( transport layer) thickness was measured and influence of the films thickness on the photoelectric properties of FTO/NTO composite film assembly devices was analyzed. The experimental results show that the lifetime of photo generated carriers can be changed by the thickness of the barrier layer. When the thickness of NTO film is 90 nm,the lifetime of photo generated carriers is the highest,and the effect of the barrier layer on suppressing photo generated carrier recombination is the best. The visible light transmittance of FTO/NTO composite film can reach over 84%,and it can meet the conductive requirements of the forward electron transmission.
作者
辛荣生
林钰
李慧灵
苏雷生
XIN Rongsheng;LIN Yu;LI Huiling;SU Leisheng(School of Material Science and Engineering,Zhengzhou University,Zhengzhou 450001,China;School of Chemistry and Environment,Henan Finance UniversityLongzihu Campus,Zhengzhou 450046,China)
出处
《河南教育学院学报(自然科学版)》
2019年第1期59-62,共4页
Journal of Henan Institute of Education(Natural Science Edition)
基金
河南省科技攻关项目(142102210068)