HIT太阳能电池专利技术分析

HIT Solar Cell Patent Technology Analysis

为了解决晶体硅电池转换成本高效率高以及薄膜太阳能电池成本低效率低的难题,原日本三洋公司从1996年开发带有本征薄层异质结(hetero-junction with intrinsic thin layer,HIT)电池,其中硅表面钝化是影响其光电转换效率的主要因素。本文主要分析了目前重要企业和研究机构在进行硅表面钝化中采用的各种工艺手段;此外,还重点分析了HIT载流子输出的改进。

In order to solve the difficulty of high conversion cost and high efficiency of crystal silicon cell and low effi-ciency of low cost of thin film solar cells, the original Japanese Sanyo Company from 1996 developed hetero-junc-tion with the intrinsic thin layer, HIT, and the silicon surface passivation is the main factor affecting the photoelectricconversion efficiency. This article mainly analyzes various technological means adopted by the current important en-terprises and research institutions in the silicon surface passivation. In addition, it also analyzes the improvement ofHIT carrier output on focus.