高取向热解石墨纳米孔的制备、控制及纳米结构的模板合成

Controlled Preparation of Nanometer-size Pits on Highly Oriented Pyrolytic Graphite (HOPG) and Templated Synthesis of Nanostructures

高取向热解石墨 (HOPG)单层及多层纳米孔可作为结构模板合成金属或半导体纳米结构。本文介绍了作者最近有关用高聚焦离子束轰击和热氧化法在HOPG上制备大小、深度 (单层、多层 )、密度可控的纳米孔 ,以及控制纳米孔的形成位置制备周期性的纳米孔有序阵列等工作。并对用HOPG纳米孔作为结构模板合成金属或半导体纳米结构及其有序阵列体系也作了介绍。

Nanometer-size monolayer and multilayer pits on highly oriented pyrolytic graphite (HOPG) can be used as templates to prepare metal and semiconductor nanostructures. This paper reviews the recent work on the controlled preparation of nanometer-size pits and nanometer-size pit arrays on HOPG by controlled ion bombardment. The recent work on pit-templated synthesis of metal and semiconductor nanostructures and metal nanostructure arrays on HOPG is also included in the paper.