微波毫微瓦功率传感器的研制

The Development of Microwave nW Power Sensor

本文介绍了使用低势垒肖特基二极管(LBSD)作为检测微波信号功率元件的微波毫微瓦功率传感器.分析了LBSD的伏-安特性,兼顾高稳定性、高灵敏度和低驻波比,设计出检波器、斩波器、低噪声前置放大器以及校正网络.该功率传感器能够检测10MHz～18GHz、lnW～10μW信号,主要技术指标接近HP8484A功率传感器水平.

Microwave nW power sensor uses low barrier schottky diode(LBSD) as a component for testing the power of microwave signals. This paper analyzes the voltage-current characteristic of LBSD and introduces the development of detector, chopper, low noise prime amplifier and correclivc network with high stability, high sensibility and low VSWR. The developed sensor can detect microwave signals of 10MHz-8GHz and 1nW-10uW, and the main specifications approach the level of the Model HP848A Power Sensor.