准平面型InSb光伏列阵红外探测器

InSb PHOTOVOLTAIC INFRARED DETECTOR ARRAY WITH QUASI-PLANE STRUCTURE

在台式光敏面基础上,采用SiO_2介质掩蔽,金属膜延伸电极和衬底区超声引焊电极引线,研制成InSb光伏型列阵的准平面型器件。由本工艺制备的器件具有无串音、结阻抗高、反向耐压高、稳定性好等良好性能。

A quasi-plane technology is developed, which is on the pasis of mesa photosensitiveunit with SiO_2 medium as mask, using metal film as expanding electrode and supersonictechnique for welding electrode wire on the substrate. The detectors made with thistechnology have good electrical and photo-electrical performances, such as high junctionimpedance, high reverse breakdown voltage, good stability of performances and nocrosstalk. The mechanism of high performances is briefly discussed.