可见增强的32×32元平面型InGaAs/InP面阵探测器

32 × 32 pixel planar InGaAs/InP detector with response extended to visible wavelength band

为了实现In Ga As探测器响应波段向可见增强,在传统的外延材料中加入一层In Ga As腐蚀阻挡层,制备了32×32元平面型In Ga As面阵探测器,采用机械抛光和化学湿法腐蚀相结合的方法,去除了In P衬底.结果表明,探测器的响应波段为0.5~1.7μm,室温下在波长为500 nm处的量子效率约为16%,850 nm处量子效率约为54%,1 550 nm处量子效率约为91%.暗电流大小与衬底减薄之前基本保持一致.理论分析了材料参数对器件量子效率的影响,为进一步优化可见波段探测器的量子效率提供了依据.

In order to extend the response of In Ga As short-wave infrared detectors to visible wavelength band,a In Ga As etch stop layer was added to the standard In Ga As epitaxial structure. After the fabrication of 32 × 32 pixel planar In Ga As detectors,the In P substrate was removed with mechanical thinning and chemical wet etching. The results indicated that the response of detectors after substrate removal covered the wavelength band from 400 nm to 1 700 nm. Quantum efficiency is approximately 16% at 500 nm,54% at 850 nm,and 91% at 1 550 nm. The detectors achieved almost the same lowdark current as they did before the substrate removal process. The effect of parameters of epitaxial material on the quantum efficiency has been analyzed and simulated,and then the method to optimize the visible response of detectors was given.