商用Flash器件在空间应用中温变规律的实验研究

Experimental research on temperature variation law of commercial Flash devices for space application

分析了工业级Flash存储器件应用于空间电子产品时应考虑的温变规律和机理,并在-35~105℃的温度条件下对韩国三星公司生产的大容量Flash存储器件K9××G08U×D系列进行了温循试验和高温步进应力试验,以评估其空间应用的可行性。试验结果显示:这一系列存储器在温度变化的情况下,电性能参数会发生规律性变化,其中页编程时间随温度的升高线性增大,105℃比-35℃时页编程时间增加15%;块擦除时间在低温条件下明显增大。在-35℃低温条件下,块擦除时间比常温条件高出72%,在105℃高温条件下,块擦除时间比常温条件高出10%。试验表明Flash K9××G08U×D系列存储器能够在-35~105℃的环境下工作,器件可正常擦写读,坏块没有增加。页编程时间随着温度的增加而增加,但是,仍然在器件的最大页编程时间之内。但是,在低温环境下,擦除时间会明显增加,在空间应用时需为擦除操作预留足够的时间。

The temperature variation law and mechanism of commercial Flash memory devices applied in space electronic products were analyzed. The temperature cycling test and high temperature step stress test of highly scaled Flash memories K9 ííG08U íD series of Samsung were carried out at the temperature -35-+105℃ to evaluate the feasibility of its space application. The results show that the page programming time and block erasing time of this series of memory changes with the temperature . The page programming time increase by 15% from -35℃ to 105℃. Block erasing time increase by 72%from normal temperature to -35 ℃. Block erasing time increase by 10% from normal temperature to 105℃. The experiment shows K9ííG08UíD series memory can work at -35-+105℃. Under such environmental temperature condition, the Flash can be read, programmed and erased. No new bad block occurrs. The page program times increase with the temperature increasing and still less than the maximum page program time. In low temperature, the erase times increase dramatically. So in space application enough time should be given for erase operation.