摘要
双色激光引信在克服云烟干扰方面具有重要价值。为了减小引信体积,保障导弹内部空间的充裕性,设计了一种基于BCD工艺的双色激光引信专用集成电路芯片。首先,对现有双色激光引信的结构和工作原理做出了详细介绍,引出了单芯片设计的思路和方法,并给出了该芯片集成的子电路的设计方法和仿真结果。该芯片使用0.25μm的BCD工艺制造。经测试使用该芯片驱动双色激光器,芯片供电电压5 V,激光器支路供电电压27 V时,红外激光器输出峰值功率可达30 W,紫光激光器输出峰值功率达25 W,脉宽50~500 ns可调,重复频率1~100 k Hz可调,窗口时间1~10μs可调,红外和紫光回波信号在接收部分实现了分离,在功能上成功取代了原系统的4块芯片,实现了系统的简化。
Dual-wavelength laser fuse has significant value in the anti-interference of frog and aerosols.In order to decrease the size of the fuze, guarantee the adequacy of the inner space of the missile and optimize the performance of all the system, an ASIC chip for the dual-wavelength laser fuse based on BCD technology was proposed. First, the structure and working principles of the dual-wavelength laser fuse were presented in detail. Then, the design strategy of the chip was deduced and the simulation result of the sub-circuits of the chip was proposed afterwards. The chip is fabricated with a 0.25 μm BCD process. Used in driving the dual-wavelength lasers, when the supply voltage of the chip is 5 V and the supply voltage of the branch of the circuits with lasers is 27 V, the peak power of infrared laser reaches above 30 W, and the peak power of violet laser reaches above 25 W. The pulse width is adjustable in a range of 50-500 ns. The repetition frequency is adjustable in a range of 1-100 k Hz. The time window is adjustable at a range of 1-100 μs. The echo signals are separated at the receiving end. Replacing the role of the 4 chips, the dual-wavelength laser fuse ASIC can simplify the structure of the system and optimizes the function of the fuze.
出处
《红外与激光工程》
EI
CSCD
北大核心
2016年第7期66-73,共8页
Infrared and Laser Engineering