控电位法制备CdSe/PANI复合薄膜及其光致发光性

Photoluminescence Performance and Preparation of CdSe/PANI Composite Films by Potential Controlled Electrodeposition

采用控电位法,以PANI薄膜作为载体,成功制备出Cd Se/PANI复合薄膜。采用扫描电子显微镜(SEM)、X射线衍射(XRD)、荧光光谱仪等仪器对所制备的薄膜进行比较与表征。Cd Se/PANI复合薄膜中Cd Se微粒粒径约为150~200 nm,且随沉积时间的延长,粒径逐渐增大。复合薄膜中含有聚苯胺和Cd Se 2种成分的晶体,并且复合薄膜的晶型结构与沉积Cd Se薄膜的厚度无关。与PANI薄膜和Cd Se薄膜比较,Cd Se/PANI复合薄膜的荧光强度明显增强,PANI增强了Cd Se的光致发光性能,光致发光发射峰位置发生红移。

With PANI as the carrier,Cd Se / PANI composite films were prepared by potential controlled electrodeposition method. The morphology,crystal structure and optic properties of the films were characterized by scanning electron microscopy( SEM),X-ray diffraction( XRD) and luminescence spectrum.SEM images show that the grain size of Cd Se in Cd Se / PANI composite films is 150—200 nm,and the grain size increases with the increase of electroplating time. X-ray diffraction result showed that Cd Se /PANI composite films contained two kinds of crystals and the crystal structure of Cd Se / PANI composite films didn't alter with the changes of its thickness. The luminescence spectrum showed that photoluminescence properties of Cd Se / PANI composite films were greater than those of the Cd Se films and PANI films. Compared with Cd Se film,the existence of PANI in composite films had a role of the carrier and significantly enhanced the photoluminescence properties of Cd Se,and led to the photoluminescence emission peak position red-shifted obviously.