摘要
本文研究了PECVD氮化硅膜的性质与衬底温度的关系,对不同衬底温度的膜的折射率、腐蚀速率、介电特性进行了讨论;本文还指出,膜的导电机理符合Poole-Frenkel发射.C-V曲线的显著滞后效应表明,膜中存在高密度的陷阱。
The correlation of properties of PECVD SiN films with their substrate temperature are investigated. The properties include refractive index, etching rate and dielectric properties. In this paper, it is demonstrated that the dominant conduction mode appears to be Poole-Frenkel emission and there exists a high density of trapping.
出处
《浙江大学学报（理学版）》
CAS
1988年第4期410-415,共6页
Journal of Zhejiang University（Science Edition）
基金
国家自然科学基金资助课题
关键词
半导体
氮化硅
MNS结构
semiconductor
silicon nitride
MNS structure
