薄层晶体硅双面陷光结构的制备及其性能研究

Fabrication and Performance of Light Trapping Structure for Thin-layer Crystal Silicon Solar Cells

采用金属辅助硅化学刻蚀法,在薄层晶体硅片前后表面分别制备硅纳米陷光结构,并表征其增强薄层晶体硅对太阳光子吸收的性能.对比研究无表面织构、双面金字塔织构、双面硅纳米织构的薄层晶体硅的漫反射光谱与透射光谱,结果表明,双面硅纳米织构的薄层晶体硅具有卓越的光吸收性能,～70μm厚度的薄层晶体硅片能够吸收93.4%的AM1.5G太阳光子.该研究结果为解决晶硅太阳电池中的光学损失问题提供了一种可供选择的陷光结构.

Silicon nanostructure arrays were prepared on the front and back surfaces of thin-layer crystal silicon by using a metal-assisted silicon chemical etching method.The light trapping performance of the nano-textured thin-layer crystal silicon was characterized by combining its reflection spectra and transmission spectra.It demonstrated that the nano-textured thin-layer crystal silicon exhibit enhanced light trapping performance as compared with the performance of planar surface or pyramid structure.The nano-textured thin-layer crystal silicon can absorb about 93.4%of AM 1.5Gphotons in the^70μm range.The results provide a way to solve the light lost problem in thin-layer crystal silicon solar cells.