摘要
研究了调制掺杂 Alx Ga1 - x N/Ga N表面 Pt肖特基接触的制备工艺 ,并对其进行了 I-V测量。通过改变对样品表面的处理工艺 ,研究了表面处理对调制掺杂 Alx Ga1 - x N/Ga N表面 Pt肖特基结接触特性的影响 ,在 n型掺杂浓度为 7.5× 1 0 1 7cm- 3的 Al0 .2 2 Ga0 .78N样品表面 ,制备得到了势垒高度为 0 .94e V、理想因子为 1 .4的 Pt肖特基接触。这与国外报道的结果接近 (=1 .2 e V,n=1 .1 1 [1 ] )
Pt Schottky contacts were fabricated based on modulation doped Al 0.22 Ga 0.78 N/GaN heterostructures and investigated by means of Schottky I V measurement. Also different pre deposition surface treatments were made and found to be crucial to the performance of Schottky contacts based on Al x Ga 1- x N/GaN heterostructures. Pt Schottky contacts with the highest barrier height of 0.94 eV and the smallest ideal factor of 1.4 were obtained in our experiments.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2002年第4期381-384,共4页
Research & Progress of SSE
