扩散平面结反偏压下的电场分布与击穿电压

FIELD PROFILE AND BREAKDOWN VOLTAGE OF THE DIFFUSED PLANAR JUNCTIONS UNDER REVERSE BIASING

采用以结深r_j及qN_Br_j^2/ε:为归一化因子的长度和电压(N_?为衬底杂质浓度,q、ε_?的意义如常),通过简单的计算公式及程序,算出了包括各种实用扩散结的平面、边、角的耗尽层厚度,结面上电场和最大电场与结电压的关系,击穿电压与结深的关系。为便于实用,给出了与扩散工艺条件有关的量作参考的曲线族。对边、角部分的击穿电压有时可高于平面部分的击穿电压的情况,进行了物理解释。

The depletion layer widths, the field at the metallurgic junctions and the maximum field versus the reverse biasing voltage ,as well as the breakdown voltage versus the junction depths for the plane part, the edges and the corners of the diffusion mask window in all practical diffused planar junctions are given through some simple formulas and computer programs. Where the distances and the voltages are normalized by r_j and qN_N r_j^2/ε_3, r_j is the junction depth and N_B is the substrat doping concentration, q and ε_3 have the conventional meanings. The results are presented as series of curves with a running parameter which related to the diffusion process, so that its can he used convenient. A dear physical explaination is also given for the cases where the breakdown voltage of the edges and/or of the corners is higher than that of the plane part.