摘要
本文建议用耗尽的线性扫描电压扫描MOS电容样品。扫描开始前MOS电容被置于强反型态,以消除表面产生的影响。根据扫描所得的电容-时间瞬态曲线,可确定样品中少于产生寿命。实验表明,对于同一个MOS电容样品,不同电压扫描率下得到的结果有很好的一致性,且与饱和电容法的结果相符合。
When a linear voltage ramp applied to the gate of an MOS device theC-t transients are observed. Before the voltage ramp is applied the MOS capacitor is biased into strong inversion in order to eliminate the surface generation. From the C-t transient curve obtained experimentally, the minority carrier generation lifetime in semiconductor can be determined. The experimental results show that for the same sample the lifetimes extracted from the C-t curves obtained under different voltage sweep rates are consistent each other, and they are consistent with the lifetimes extracted fdom saturation capacitance method.
基金
高纯硅与硅烷国家实验室资助课题
关键词
半导体
MOS电容
少子
寿命
Semiconductor
MOS capacitor
Minority lifetime