二极管方程分析求解法

Approximate Analytical solution of Generalized Diode Equation

本文介绍了二极管伏安特性方程的近似分析解法,这种解法适用于半导体二极管、光电探测器、场效应管以及其他器件物理学领域,求解结果与数值计算法非常接近。

In this paper, an approximate but very precise analytical solution of a generalized diode equation is introduced. This solution can be used in the theory of semiconductor diodes, photodetectors, field-effect transistors, and other areas of device physics. The proposed analytical solution is in excellent agreement with the results of the numerical calculation.