在CMOS射频集成电路设计中对稳定性的分析

The Stability Analysis in CMOS RFIC Design

本文详细分析了用于射频集成电路设计的MOS场效应管(MOSFET)的稳定特性。利用米勒(Miller)效应和y参数两种方法对MOSFET的稳定特性做了定性和定量的理论分析,并给出了理论分析和实际仿真的对比结果,从中可看出理论分析和仿真结果完全相符。最后,本文以一个工作于2.4GHz,0.5μm工艺的低噪声放大器(LNA)设计为例,给出了在具体电路设计中,提高整个电路稳定性的方法。

The stability analysis of MOSFET used in RFIC design is presented in detail. Through the whole analysis, two methods, Miller effect and y parameter, have been employed. Simulation result coincides with theoretical analysis quite well. As an example, a 2.4GHz 0.5um LNA design is given in the end of this paper. The proposed method can be used to improve the stability of whole circuit.