摘要
制备了不同注入剂量的 Ce3 + 掺杂金刚石薄膜 ,研究了其光致发光特性 ,得到了发光主峰位于蓝紫区(42 1nm和 4 6 2 nm处 )的光发射 .实验中发现随着 Ce3 + 注入剂量的增加 ,器件光致发光的强度也逐渐增加 ,并对这些实验现象作了解释 .
Ce 3+ ion doped diamond thin films with two kinds of dosage are made. Its photoluminescence (PL) characters have been investigated. The experiment results indicate that the PL spectrum shows the main peak centered at 462nm, and the other weaker peak at 421nm. The intensity of PL increases obviously with increasing Ce 3+ ion implantation, and the experiment results have been explained.
出处
《物理实验》
北大核心
2003年第1期18-20,25,共4页
Physics Experimentation
基金
国家自然科学基金资助项目 (5 9882 0 0 5 )
