摘要
用扫描俄歇探针研究了掺杂磷、硼对纳米ZnO薄膜电学性能的影响。结果表明 ,ZnO薄膜掺入磷或硼后 ,可以显著降低薄膜电阻 ;改变扩散温度可以改变磷、硼浓度 ,从而改变Zn/O化学计量比 ,Zn/O化学计量比越大 ,薄膜电阻越小 ;掺磷或硼的ZnO薄层电阻最低值时的扩散温度分别为 85 0℃和 80 0℃。
The effect of the doped phosphorus or boron on the electrical property of Nano-ZnO thin film is investigated by Scanning Auger Microprobe (SAM ) . Results show that the electrical resistance of the Nano-ZnO thin film decreases greatly after it is doped with phosphorus or boron. If the heat-treatment temperature changed, the concentration of phosphorus or boron will be changed. And the greater the Zn/O stoichiometric ratio, the less the electrical resistance. The electrical resistance of the surface layer of the thin film reaches the lowest when the thin film is doped with phosphorus and heat-treated at 850℃ or it is doped with boron and heat-treated at 800℃.
出处
《理化检验（物理分册）》
CAS
2003年第1期19-21,共3页
Physical Testing and Chemical Analysis(Part A:Physical Testing)
