α-SiC/α-Si PIN异质结集成型全色色敏元件的研究

The Study of Integrated Type Full Color Sensor with a-SiC/a-Si PIN Heterojunction

本文研究一种新型a-SiC/a-Si PIN异质结集成型全色色敏元件的制备工艺和结构,详细讨论了色敏元件的优化设计以及响应特性、暗电流等性能。实验结果表明,由于采用宽带隙的a-SiC窗口层和分离反应室的PECVD工艺,使色敏元件的灵敏度和暗电流特性得到了明显改善。

In this paper, the integrated type full color sensor with a-SiC/a-Si PIN hete-rojunction is investigated. The preparation and structure of this new film color sensor are given. The optimum design and device chracteristics, such as spectral response and dark current, are discussed. Experimental results show that properties of the color sensor are substantially improved by the wide gap a-SiC window layer and separated reaction chamber method.