摘要
本文用单陷阱产生一俘获模型和一级电场因子近似弛豫函数研究了“多陷阱相干效应”对簿栅氧化层电流弛豫谱(OCRS)的影响。给出了高场下、多陷阱共存时,各陷阱OCRS峰并存的条件和峰位、峰值的修正公式。
In this paper, on the grounds of the single-trap model and the first order approximation of the relaxation function of electric field factor, the effects of multi-trap interference on thin oxide current relaxation spectroscopy (OCRS) is studied. The conditions are given under which the OCRS peaks related to the different kind of traps can be observed by OCRS method when there are many kinds of traps generated in the high electric field stressing oxide layer. The corrected formulas of both peak position and peak value have been obtained.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1992年第5期25-32,共8页
Acta Electronica Sinica
关键词
薄SIO2
陷阱
相干效应
氧化层
Thin SiO2, Trap,Interference effect,Oxide current relaxation spectroscopy.