高温多次N^+注入硅形成晶态α-Si_3N_4研究

Formation of Crystalline o-Si3N4 Layer by Multiple N+ Implantation into Si at High Temperature

在1000℃高温下,经多次N+注入硅形成了晶态α-si_3N_4省去了常规SOI技术中的高温长时间热退火工艺。这对于简化工艺步骤、降低工艺温度和缩短工艺时间有实际意义。

Crystalline α-Si3N4 layer was formed by multiple N+ implantation into Si at high temperature, which omitted post high temperature annealing time. It is practically beneficail for simplifying working processes, lowering temperature and shortering time.