摘要
本文介绍了快速热处理技术的研究成果.包括:RHT设备,高剂量注入硅的RTA机理与最佳RTA条件选择,以及浅PN结制造,硅化物形成,BPSG回流和薄氧化层的快速氮化等RTP技术.
The RHT equipment, which was invented for RTP, can be applied to various RTP processes with satisfactory results. The mechanisms and optimal parameters of rapid thermal annealing of high dose implanted silicon, fabrication of shallow PN junctions, formation of silicide, reflow of BPSG and RTN of ultrathin oxide films have been discussed from a comprehensive point of view.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1992年第11期1-11,共11页
Acta Electronica Sinica
关键词
集成电路
热处理
退火
Rapid thermal annealing, Rapid thermal nitridation, Formation of silicide, Reflow of BPSG, Shallow PN junctions
