互补横向绝缘栅双极晶体管的模型与特性

Modeling and Characteristics for the Complementary Lateral lnsulate-Gate Bipolar Transistor

本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型.根据双极传输理论,考虑电导调制效应、闭锁效应、反向注入及电流的多维效应,导出一种漂移宽基区双极—MOS器件的电路网络模型.首次将此模型直接嵌入SPICE3A.7中.计算CLIGBT在不同栅压和横向电阻下的静态闭锁特性及在不同漂移区长度和不同PMOS宽长比下的瞬态闭锁特性.由此可解决含有CL-lGBT等BIMOS类器件的高压集成电路HVIC的设计问题.

A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper. The ambipolar transport equation in the wide drift base region of the PNP device is solved, in which conductivity modulation, latch-up and back injection as well as current multidimensional effects are accounted for. The new network model is, for the first time, implemented in SPICE3A7, which is used to simulate the static charateristics of CLIGBT at the different gate voltages of n-MOS and the different lateral resistance, and the dynamic behaviors of that at the different length of base and aspect ratio of PMOS. It is shown that the revised program can be used in the simulation for HVIC.