摘要
为了得到高性能的 Ga N基发光器件 ,有源层采用 MOCVD技术和表面应力的不均匀性诱导方法生长了 In-Ga N量子点 ,并通过原子力显微镜 (AFM)、透射电子显微镜 (TEM)和光致发光 (PL )谱对其微观形貌和光学性质进行了观察和研究 .AFM和 TEM观察结果表明 :In Ga N/ Ga N为平均直径约 30 nm,高度约 2 5 nm的圆锥 ;In Ga N量子点主要集中在圆锥形的顶部 ,其密度达到 5 .6× 10 1 0 cm- 2 .室温下 ,In Ga N量子点材料 PL谱强度大大超出相同生长时间的 In Ga N薄膜材料 ,这说明 In Ga N量子点有望作为高性能有源层材料应用于 Ga N基发光器件 .
In order to achieve an excellent property of GaN-based light emitting device,InGaN quantum dots (QDs) are grown as active layer by metalorganic chemical vapor deposition (MOCVD) by the ununiformity of the surface stress.Their microstructure and optical properties are studied by atomic force microscopy (AFM),transmission electron microscopy (TEM) and photoluminescence (PL) technique.From the results of AFM and TEM,it is concluded that InGaN/GaN appeare cones in about 30nm diameter and 25nm height,and InGaN QDs concentrate on the top of the cones.Their density is about 5.6×10 10 cm -2 .InGaN QDs have stronger PL intensity than the normal InGaN film grown at the same time,and can be used to improve the light output of GaN-based light emitting device.
基金
国家自然科学基金 (批准号 :60 0 860 0 1)
国家重点基础研究专项经费 (No.G2 0 0 0 0 683 )资助项目~~
