摘要
研究了在大直径直拉硅单晶中掺氮 (N )对原生氧沉淀的影响 .通过高温一步退火 (10 5 0℃ )和低 -高温两步退火 (80 0℃ +10 5 0℃ )发现在掺 N直拉 (NCZ)硅中氧沉淀的行为与一般直拉 (CZ)硅是大不相同的 ,经过高温一步退火后 ,在氧化诱生层错环 (OSF- ring)区氧沉淀的量要小于空洞型缺陷 (voids)区 ,而经过低 -高温两步退火后 ,OSF-ring区的氧沉淀量要远远大于 voids区 .由此可得 ,在晶体生长过程中 ,N通过改变硅晶体中空位的浓度及其分布从而改变原生氧沉淀的尺寸和分布 .并在此基础上讨论了在大直径 NCZ硅中掺 N影响原生氧沉淀的机理 .
The effect of nitrogen on grown-in oxygen precipitates in large diameter Czochralski (CZ) silicon is investigated.After one-step high temperature annealing and low-high temperature two-step annealing,it is found the behavior of oxygen precipitation in nitrogen-doped CZ (NCZ) silicon is significantly different from that in the conventional CZ silicon.The oxygen precipitation in voids zone is much heavier than that in OSF-ring zone in NCZ silicon after one-step high temperature annealing,while less than that in OSF-ring zone after low-high temperature two-step annealing.It is believed that the size and distribution of grown-in oxygen precipitates are changed by nitrogen doping by the means of vacancies.Based on these facts,the effect mechanism of nitrogen doping on grown-in oxygen precipitates is discussed.
基金
国家自然科学基金资助项目 (批准号 :5 0 0 3 2 0 10 )~~
关键词
大直径
直拉硅
掺氮
原生氧沉淀
微氮直拉
nitrogen doping
Czochralski silicon
grown-in oxygen precipitates
